Abstract
Transient photocapacitance (TPC) and photocurrent (TPI) spectroscopy were used to characterize defects in CdTe/CdS solar cells. A broad defect band is observed at an optical energy of 1.28eV above the valence band, and such a defect is not indicated by admittance spectroscopy and drive-level capacitance profiling. Temperature-dependent TPC measurements of the defect band follow a thermal quenching model in which the defect׳s energy, 0.22eV below the conduction band, is consistent with the optical response. We provide a theoretical basis for the use of a thermal quenching model in TPC.
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