Abstract
The optical reflectance and transmittance spectra of a periodic InGaN semiconductor heterostructure with 100 quantum wells are studied at room temperature. Numerical modeling with a single set of parameters gave a quantitatively accurate fit of the experimental reflection and transmission spectra in a wide wavelength range. The radiative decay parameter is determined to be 0.25 meV and the nonradiative decay parameter is 40 meV.
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