Abstract
Measurements of the optical reflectance anisotropy (RA) of the Si/Cu(110)-c(2 × 2)surface alloy are reported. Significant changes in the RA response of Cu(110) are observed uponthe formation of the surface alloy, and with the growth of one-dimensional (1D) anisotropic Sichains on top of the surface alloy. The transitions between the surface states near the Fermi level(EF) at the symmetry point on the clean Cu(110) surface are no longer observed in RA spectra of 0.3 MLSi coverage. Peaks in RA spectra arising from transitions between surface-modified bands nearEF atthe L point are found to be sensitive to the formation of the surface alloy. The RA response of thec(2 × 2) surface alloy from 3.0 to 5.5 eV is simulated using a simple three-phase derivativemodel. The addition of an overlayer phase to this model makes it possible tosimulate higher coverage Si/Cu RA profiles where 1D Si chains cover the surfacealloy. The success of the models, in which discrete phases contribute to the RAresponse, supports the view that the Si chains grow on top of the intact c(2 × 2) alloy. Depositing between 1.2 and 1.8 ML Si results in no change to the RA spectroscopysignal, indicating that the signal remains sensitive to the covered alloy interface.
Published Version
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