Abstract
We demonstrate terahertz (THz) generation at megahertz repetition rate by optical rectification in GaP crystals, using excitation average power levels exceeding 100 W. The laser source is a state-of-the-art diode-pumped Yb:YAG SESAM-mode-locked thin-disk laser, capable of generating 580 fs pulses at an average power up to 120 W and a repetition rate of 13.4 MHz directly from a one-box oscillator, without the need for any extra amplification stages. In this first demonstration, we measure a maximum THz average power of 78 μW at a central frequency of 0.8 THz. Our results show that optical rectification of state-of-the-art high average power ultrafast sources in nonlinear crystals is within reach and paves the way toward high average power, ultrafast laser pumped THz sources.
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