Abstract
In this Letter, we have demonstrated significant electric field induced (EFI) optical rectification (OR) effects existing in the surface layers of germanium (Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the two effective second-order susceptibility components χzzz(2eff)/χzxx(2eff) for Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
