Abstract
It was demonstrated that S- and Te-doped GaSe crystals are useful and prospective for mid-IR and THz generation by optical rectification as well as phase matched mixing of spectral components of the fs pulse (down conversion). Phase matching curves for down-conversion in the S-doped and Te-doped GaSe. The sample optimally doped with sulfur (2.5 mas. %) have shown better characteristics under high pump fluencies than ZnTe material used in commercial devices.
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