Abstract
TeOx films containing Ge, Sn or Pd were prepared for application in optical recording media by electron-beam coevaporation of Te, TeO2 and additional elements. Since these films exhibited large differences in optical constants between the amorphous and crystalline states, they are thought to be potentially useful for optical recording materials. The addition of Ge, Sn or Pd increased the transformation temperatures from the amorphous to the crystalline state in comparison with pure TeOx films. The time required for crystallization was shortened to 300 ns by the addition of Ge, Sn and Pd, while pure TeOx films required about 30 sec. The TeOx–Pd film showed excellent stability. The phase transformation mechanism of these films from the amorphous to crystalline states is discussed.
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