Abstract
ABSTRACT Optical recording by smectic layer rotation is proposed and demonstrated. Smectic layer rotation is induced by the application of asymmetric voltage pulses, and the use of an amorphous silicon layer as a photoconductor allows the area for rotation to be selected by partial irradiation of the cell. The anisotropy of smectic layer rotation is clarified, and the recording resolution is found to differ between patterns oriented parallel and perpendicular to the smectic layer normal. This anisotropy is attributed to differences in the ease of boundary formation in the smectic layer.
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