Abstract
The harmonic modulation products of a PIN-GaAs MESFET optical receiver front end are found to be about 20 dB smaller than those of a PIN-bipolar transistor front end, using the ‘two-frequency optical signal method’. It is pointed out that the design parameters in the PIN-GaAs MESFET front end, optimised from the high-sensitivity viewpoint, are compatible with the requirements for low distortion in analogue transmission systems.
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