Optical property and lasing of GaAs-based nanowires

Abstract

GaAs-based nanowire (NW) lasers working in the infrared region is critical in integrated optoelectronics. In the past few decades, the field of NW lasers has developed rapidly. Compared with materials working in the ultraviolet and visible ranges, GaAs-based infrared NW lasers, however, are more difficult to achieve because of their specific properties. In this review, we focus on the recent developments of GaAs-based NWs, more especially, the optical property and lasing of GaAs-based NWs. The growth mechanism of GaAs NWs is introduced in detail, including the crystal phase control and the growth of complex structures. Subsequently, the influence and improvement of the optical properties of GaAs-based NWs are introduced and discussed. Finally, the design and latest progress of GaAs-based NW lasers are put forward.