Abstract
Molybdenum disulfide (MoS2) based phototransistors and sensors suffer from poor light responsivity due to the poor light absorption capability. This paper presents a first principles study of the influence of transition metal (TM) atoms (Au, Ag, and Cu) and alkaline metal (AM) atoms (Na, Li) doping on the optical properties of MoS2 bulk layers. From the obtained results of absorption coefficient, optical conductivity, and reflectivity it can be concluded that in applications of MoS2 based photodiode/phototransistor sensors, doping of AM atoms may prove an effective alternative to conventionally used TM (Au) doped arrays.
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