Abstract
We have grown ZnSe on GaN (0 0 0 1) substrate by MBE. Although the X-ray rocking curve shows that the growth axis of ZnSe is 〈1 1 1〉, the samples show only ZnSe-LO Raman signal in the optical arrangement of back-scattering geometry. The photoluminescence (PL) profiles indicate a strong self-activated emission band around 2.1–2.2 eV due to the Zn vacancies. Some structures observed in the PL spectra are due to the resonant Raman scattering corresponding to the LO phonon replica. The PL peaks at 2.85, 2.82 and 2.79 eV are considered to be the Raman signals of 7-, 8- and 9-LO, respectively, from the laser diode 3.06 eV (405 nm) used as the excitation source.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
