Abstract
► A new template-free electrochemical deposition method for the synthesis of ZnO nanorods/nanowires directly on n - and p -type silicon (Si) substrates. ► Improved structural, electrical and optical properties of the ZnO nanowires/ p -Si (1 1 1) heterojunction have been demonstrated. ► Photodetectors have been fabricated based on the n -ZnO nanowires/ p -Si heterojunction obtained by electrodeposition. Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n -Si(1 1 1) and p -Si(1 1 1). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (1 1 1) substrate are reported. We fabricated ZnO nanowires/ p -Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150–800 °C. Photo-detectors have been fabricated based on the ZnO nanowires/ p -Si heterojunction.
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