Abstract
Aluminum doped Zinc Oxide (AZO) and Lithium doped Zinc Oxide (LZO) thin films are obtained by Pulsed Laser Deposition (PLD) method. These films are characterized by using Spectroscopic Ellipsometry (SE), X-ray Diffraction (XRD) and Photoluminescence (PL). By modeling the ellipsometry spectra we get the dielectric functions, the optical band gap E g, and the electrical properties. Our results show the influence of the processing parameters on the optical and structural properties of doped ZnO thin films. The post-annealing treatment applied to AZO thin films, changes strongly the optical properties, by lowering the resistivity and red-shifting the band gap.
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