Abstract
Metal plasma ion implantation has being successfully developed for improving the electronic and optical properties of semiconductor materials. Prior to deposition, a TiO 2 colloidal suspension was synthesized by microwave-induced thermal hydrolysis of the titanium tetrachloride aqueous solution. The TiO 2 thin film was optimized to obtain a high-purity crystalline anatase phase by calcinations at 550 °C. The TiO 2 coating was uniform without aggregation, which provided good photo conversion efficiency. Ag ion implantation into the as-calcined TiO 2 thin films was conducted with 1 × 10 15 ~ 1 × 10 16 ions/cm 2 at 40 keV. The peak position and intensity of the photoluminescence and UV–Vis absorption spectra are quite sensitive to Ag doping. The optical characterization showed a shift in optical absorption wavelength towards infrared ray side, which was correlated with the structure variation of the Ag + implanted TiO 2. Due to the strong capability of forming compounds between the energetic silver ions and TiO 2, the photoluminescence emission and UV–Vis absorption efficiencies were improved.
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