Abstract
The optical properties of α-SiC before and after ex-situ hydrogenation have been investigated by absorption-, reflectivity- and ellipsometric measurements in the energy range 1.5eV < hv <24eV. Unlike for in-situ hydrogenated SiC films drastic changes in the dielectric function were observed, which can be explained by the formation of a surface carbon layer. The occurence of a strong plasmon at 6.5eV is related to the formation of sp 2 bonds between carbon atoms in the surface layer. Our investigations provide new insight to a new method for changing the optical and electronic properties of SiC, that is inert to most other widely used liquid etchants.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
