Abstract
We have used photoreflectance and low temperature photoluminescence to study the optical properties of short period AlAs/GaAs superlattices with periods ranging from 18 to 60 Å and varying AlAs to GaAs layer thickness ratios. For superlattices with AlAs to GaAs thickness ratios significantly less than one, the lowest energy transitions are direct in character, that is associated with the Γ state in the GaAs well; while for those with AlAs to GaAs ratios of approximately one the lowest energy transitions are indirect in character. These results are interpreted in the light of recent tight binding calculations which predict that for these indirect superlattices the lowest state for electrons is associated with the X-state in the AlAs barrier, while holes remain predominantly localized in the GaAs layers.
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