Abstract
Experimental results for the pseudodielectric function 〈ε〉 of CuIn(SxSe1−x)2 alloy system are reported. The investigation has been performed on the full composition range using crystals cut from ingots of 10 mm diameter and 40 mm length. The ingots were grown using the classical Bridgman method. Ellipsometric measurements were performed at room temperature in the range 1.5–5.5 eV. The energies of critical points have been determined from the imaginary part of the dielectric function. The transition energies (E1, E2, E3, and E4) are found to shift linearly to higher energies as the sulfur content increases. The copper d level is found to be dominant in the ranges 2.5–3.5 eV for CuInSe2 and 2.8–4 eV for CuInS2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.