Abstract
The complex optical index of refraction for evaporated films of tellurium has been measured using ellipsometry over the wavelength range 439 to 633 nm. Values of n and k as a function of wavelength and as a function of thickness are presented. The transmittance and reflectance of single layers of tellurium, as well as multilayer structures to be used for optical data recording media, are shown as a function of wavelength. Oxide formation of these films has also been measured, and a model for the role of oxides in altering adhesion of the films is presented.
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