Abstract
The silicon-vacancy (SiV) and germanium-vacancy (GeV) centers in diamond have a sharp photoluminescence with high brightness. In this work, the photoluminescence of these centers is measured up to 180 GPa using nanodiamonds integrated in a diamond anvil cell. The results show blueshifts in the mean emission energy determined by the atomic radii of the impurity. The agreement with $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ calculations based on the lattice compression of diamond demonstrates the potential of these centers for sensing under extreme pressure conditions.
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