Abstract
The properties of thin SiN<sub><i>x</i></sub> films deposited by computer-controlled electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) from a mixture of SiH<sub>4</sub> and N<sub>2</sub> onto sapphire substrates were investigated by optical transmission spectroscopy in the wavelength range 200 to 2600 nm. The wavelength dependencies of the refractive index <i>n</i>, extinction coefficient <i>k</i>, absorption coefficient α, and the optical bandgap <i>E</i><sub><i>g</i></sub> of the films were studied. The optical properties of SiN<sub><i>x</i></sub>, were found to be strongly dependent on the gas flow ratio during deposition. The optical band gap displays a blue shift with increase of nitrogen content in the layer with values ranging from 1.7 to 4.2 eV.
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