Abstract
The real and imaginary parts of the complex refractive index of SixNyHz have been calculated from first principles. Optical spectra for reflectivity, absorption coefficient, energy-loss function (ELF), and refractive index were obtained. The results for Si3N4 are in agreement with the available theoretical and experimental results. To understand the electron energy loss mechanism in Si-rich silicon nitride, the influence of the Si/N ratio, the positions of the access Si atoms, and H in and on the surface of the ELF have been investigated. It has been found that all defects, such as dangling bonds in the bulk and surfaces, increase the intensity of the ELF in the low energy range (below 10 eV). H in the bulk and on the surface has a healing effect, which can reduce the intensity of the loss peaks by saturating the dangling bonds. Electronic structure analysis has confirmed the origin of the changes in the ELF. It has demonstrated that the changes in ELF are not only affected by the composition but also by the microstructures of the materials. The results can be used to tailor the optical properties, in this case the ELF of Si-rich Si3N4, which is essential for secondary electron emission applications.
Highlights
Silicon nitrides are commonly used for high-temperature and high-endurance applications due to their excellent mechanical strength and wear resistance [1]
The results indicate that the secondary electron yield (SEY) is extremely sensitive to the energy-loss function (ELF) in low energies, especially below 10 eV
Extra energy loss peaks have been found in the energy range lower than 10 eV in all the studied systems compared with β-Si3N4
Summary
Silicon nitrides are commonly used for high-temperature and high-endurance applications due to their excellent mechanical strength and wear resistance [1]. The advantages of smaller, less costly systems have provided opportunities for researchers to develop versatile MEMS devices. One of these MEMS based devices is a novel photon detector with a goal of ps temporal resolution proposed by H. van der Graaf [6] at NIKHEF, Amsterdam. The photon detector (called Tipsy) being developed has the potential to revolutionize photon detection with its superb temporal resolution. This device relies on a stacked set of curved, miniature, thin
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