Abstract
Since the growth of single layer of Si has emerged, silicene became a potential candidate material to make up the disadvantage of graphene. In this paper, the complex surface conductivity is applied to characterize the properties of silicene and we investigate the optical characterization of silicene-dielectric interfaces from IR to far UV range. The silicene-Si and silicene-Ge interfaces along both parallel and perpendicular polarization directions of electromagnetic field with normal incidence are considered in this work. The optical properties of the silicene-dielectric systems proposed in this paper lay a foundation for the performance of complex silicene-based optoelectronic devices such as sensors, detectors, filters, UV absorbers and so on.
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