Abstract
Nano- and femtosecond laser pulse annealings were applied for crystallization of thin amorphous Si films and amorphous Si nanoclusters in silicon-rich nitride and oxide films. Laser assisted formation of amorphous Si nanoclusters in the non-stoichiometric dielectric films was observed. Non-thermal effects in crystallization of amorphous Si by femtosecond annealing were supposed. This approach is applicable for the creation of dielectric films with Si nanoclusters on non-refractory substrates.
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