Abstract
Abstract A detailed study of optical properties of ruthenium silicide (Ru 2 Si 3 ) has been performed by means of first-principle full-potential linearized-augmented-plane-wave method (FLAPW) calculations. The calculated spectral dependence of the absorption coefficient was compared with absorption measurements, indicating very good agreement. The compound is found to be a direct-gap semiconductor with low oscillator strength of the first interband transition.
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