Abstract
Photoluminescence (PL) properties of the re- sidual shallow donors in GaN epitaxial layers grown by low-pressure metal organic chemical vapor deposition (LP- MOCVD) were reported. Well-resolved free exciton transi- tions and luminescence due to the residual shallow donors were observed. The localization energy and binding energy of the neutral shallow donor were found to be 7m eVand 35 meV, respectively. In addition we identified a new ion- ized donor bound exciton center. Temperature dependence of the neutral donor bound exciton PL peak was found to fol- low the same variation as the band gap with temperature and Varshni's coefficients were obtained. The linewidth of donor bound exciton transition increases linearly with temperature and their interaction with the acoustic phonons was thought to be the only contribution to the linewidth. From the PL intensi- ties the thermal activation energy of the neutral donor bound exciton was estimated as 9m eV. The ratio of the total free excitons' intensity to the total bound excitons' intensity in- creases with temperature, which shows that the donor bound excitons thermally dissociate releasing free excitons.
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