Abstract
Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and analyzed. We studied the influence of electrochemical etching parameters on spectral reflectance of pSi structure. A modification of interference pattern was observed due to changes of microstructure. We determined the thickness of pSi layers from spectral reflectance. Solar cells with a porous structure achieve high efficiency and long life. These solar cells are predestined for use in transport.
Highlights
Porous silicon has become a distinguished material in solar applications
The thickness of Porous silicon (pSi) layer is related to the number of local extremes during the spectral reflectance [10,11]
The thickness of one or more layers in a layer stack can be determined from spectral reflectance by several methods: fast Fourier transformation (FFT) analysis, regression analysis with χ2 test, by using interference pattern and other [10,11,12,13]
Summary
Porous silicon (pSi) has become a distinguished material in solar applications. Monocrystalline Si (mono-Si) produced by the Czochralski method is the most commonly substrate for pSi production. R values of untreated mono-Si are over 40 % in range of spectrum relevant for solar cell applications [2]. This high spectral reflectance can be reduced by using anti-reflection layers or by additional surface treatment. The most commonly used method of pSi production is electrochemical etching of p-type or n-type Si substrate in a solution of hydrofluoric acid (HF) and acetonitrile (CH3CN). There are two regimes of etching of silicon depending on current density: pore formation and electropolishing. Regimes of silicon electrochemical etching in HF solution are shown in Figure 2 [6,7]. The spectral reflectance was significantly modified depending on etching conditions
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