Abstract

Recently, semiconductor nanograting layers have been introduced and their optical properties have been studied. Spectroscopic ellipsometry has shown that nanograting significantly modifies the dielectric function of c-Si layers. Photoluminescence spectroscopy reveals the emergence of an emission band with a remarkable peak structure. It has been observed that nanograting also alters the electronic and magnetic properties. In this study, we investigate the quantum efficiency and spectral response of Si p-n junctions fabricated using subwavelength grating layers and aperiodically nanostructured layers. Our findings indicate that the quantum efficiency and spectral response are enhanced in the case of nanograting p-n junctions compared to plain reference junctions. Aperiodically nanostructured junctions exhibit similar results to nanograting junctions. However, aperiodic nanostructuring is a more straightforward fabrication method and, consequently, more appealing for the solar cell industry.

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