Optical properties of PECVD dielectric thin films: thickness and deposition method dependence

Abstract

Low- k dielectric carbon doped silicon dioxide films 105–1255 nm in thickness, prepared by plasma-enhanced chemical vapor deposition (PECVD) in a six-station sequential deposition system and in a single deposition station, have been investigated for their optical properties using an optical spectrometer coupled with a hot stage. A decrease in refractive index, n, for films with six sub-layers compared with films with a single layer of similar thickness has been observed. This decreased refractive index is thought to be caused by the different effect of crystallinity of the substrate, as a film interface effect is introduced due to the different deposition methods. Both types of PECVD thin films show an increasing refractive index with increasing thickness, which could be attributed to the increased effective density with the increased thickness indicated from Fourier transform infrared spectroscopy microstructure analysis. Cauchy dispersion function is found to be valid for films within all the thickness range and with different deposition methods from visible spectrum to IR spectrum. The refractive index is found to decrease as the temperature increases from 25 to 450 °C at a fixed wavelength for all the films.