Abstract
The Sm3+ doped Sr2MgSi2O7 phosphors were prepared via solid state reaction method. The prepared phosphors have characterised with X-ray diffraction (XRD), Field emission electron scanning microscope (FESEM), Diffuse reflectance (DR) spectroscopy, Photoluminescence (PL) together with decay curve. The XRD pattern shows the phase purity of the phosphors. In FESEM study the particle shows spherical morphology and consists of particles with irregular and different size distribution. The band gaps of the samples were found to be increased trend corresponding to increase the Sm3+ dopant concentration. The strongest excitation and emission peaks were observed at 402 nm (6H5/2→4F7/2) and 603 nm (4G5/2→6H7/2) respectively. The Sm3+ doped Sr2MgSi2O7 shows yellowish color emission with the excitation wavelength of 402 nm. The prepared phosphor shows excellent thermal stability. The critical concentration of Sm3+ ions in Sr2MgSi2O7 lattice was found to be at 3 mol%. The critical energy transfer distance (Rc) of the prepared sample was found to be 17.36 A. The concentration quenching procedure of the emission in the prepared samples for the transition 4G5/2→6H7/2 was multipole–multipole interaction.
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More From: Journal of Materials Science: Materials in Electronics
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