Abstract
The morphological evolution of thin layers of InAs deposited on (0 0 1)GaAs has been investigated by photoluminescence (PL) and atomic force microscopy (AFM). We observe PL features that correspond to the transformation of the InAs wetting layer and 2D islands into quantum dots (QDs), which is supported by the AFM study. Variation in the PL spectra is also observed as a function of the thickness of the GaAs layer deposited on top of the InAs layer. Luminescence intensity from both the QDs and the wetting layer (WL) picks up at a thickness of about 10–20 monolayers. As the thickness is increased, uprise in PL intensity for both QDs and WL together with a narrowing in the WL peak is observed.
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