Abstract
AbstractThe (In15Sb85)100–xZnx films (x = 0∼13.7) were deposited on nature oxidized Si wafer at room temperature by dc co‐sputtering of Sb target and InZn composite target. Effects of Zn content on the optical properties of (In15Sb85)100–xZnx film were examined by X‐ray diffraction and reflectivity thermal analyzer. It is found that the crystallization activity energy of the film is increased with Zn content, this indicates that the thermal stability of amorphous state is improved by doping Zn. The structure of as‐deposited (In15Sb85)100–xZnx film was amorphous and it would transform to Sb, InSb, and ZnSb coexisting phases after annealing at 250 °C. The reflectivity of annealed film was higher than that of as‐deposited film. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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