Abstract
Photoluminescence measurements have been used to investigate lattice-matched AlxGa1−xAs, x ≤ 0.27, and strained Inx(Al0.45Ga0.55)1−xAs quantum wells of dimension 20 to 150 Å with AlxGa1−xAs, x ≥ 0.43, barriers. Using highly purified precursors to eliminate oxygen-based impurities, narrow intense 10 K photoluminescence was observed from almost all the quantum wells, down to a wavelength of 613 nm. At very short wavelengths the photoluminescence is found to be controlled by carrier leakage through the indirect AlxGa1−xAs barriers. A 1000 μ × 75 μm laser diode, based on a single In0.19(Al0.45Ga0.55)0.81As quantum well, had a room-temperature threshold current density of 1.27 kA/cm2 at a wavelength of 691 nm.
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