Abstract
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. The layers of nanowires had a thickness of 5.5 µm, 20 µm, 50 µm and a porosity of 60 %. The porous silicon layers had a thickness of 5 μm, 50 μm and a porosity of 45 %, 55 % and 65 %. The change in the energy band structure in single-crystal silicon nanowires and in a single-crystal matrix of porous silicon is shown.
Highlights
A promising material for modern micro- and nanoelectronics is monocrystalline silicon nanowires and porous silicon
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm
On low-resistance silicon substrates, mesoporous layers of porous silicon are almost always created, which do not luminesce in the visible region of the spectrum [1]
Summary
The paper presents the results of a study of the optical reflection and transmission spectra of a silicon single crystal p-Si (100) with silicon nanowires grown on both sides and porous silicon p-Si (100) on a single crystal substrate in the spectral range 0.2 ÷ 1.7 μm. Monocrystalline silicon nanowires and porous silicon have found applications in photodetectors and solar cells. The thickness of the silicon dioxide film is increased to improve surface passivation and reduce the effective lifetime of minority charge carriers [5]. The relationship between the morphology of the porous layer, absorption, light transmission, and the effective lifetime of minority carriers in porous silicon, which is used in solar cells, is modelled using an analytical model [6, 7]. The relaxation time of photoconductivity in porous silicon was found from the solution of the non-stationary diffusion equation of minority charge carriers and the boundary conditions written for the porous layer and single-crystal substrate [7, 8].
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