Abstract
AbstractMeasurements of the reflectivity [R(pure) − R(alloy)] of 3000 Å thick Mo‐Re films for photon energies between 0.54 and 6 eV and Re concentrations around 4 at% are reported. The resistivity of the films is also measured and 2.2 μΩ cm/at% is found for the change in resistivity of the films upon alloying. The frequency dependence of the optical dielectric function, ϵ = ϵ1 + iϵ2, of the pure and alloy films is found from a Kramers‐Kronig analysis of the reflectivity data. The results for the differential optical conductivity ω[ϵ2(alloy) minus;ϵ2(pure)] are discussed in terms of the changes in the electronic structure of Mo upon alloying with Re. It is concluded that the rigid band model is inapplicable in this case. The results of the optical data and the resistivity are consistent with the formation of localized Re d‐levels 0.8 eV below the Fermi level where pure Mo has a low density of electronic states. However, this interpretation is not unique and further studies are suggested.
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