Abstract
The LuFeO3 thin films were successfully prepared by pulsed laser deposition on silicon and LaNiO3-coated silicon substrates, respectively. The crystalline structure of the films has been studied by x-ray diffraction and indicated that all the films were well-crystallized. Atomic force microscope was used to characterize the surface morphology of the films and the surface was uniform and dense. Raman spectra measurements were carried out to study the lattice vibration modes of the films in the 200-1000 cm−1 wave number range. Polarization-electric field hysteresis loops of the LuFeO3 thin films were measured at applied electric field.
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