Abstract

Si–B–N ceramic hard films were prepared by injecting N2+SiH4+B2H6 reaction gas into an argon DC arc plasma jet at reduced pressure. XPS, FT-IR, SEM, and microhardness tester were used to characterize the samples, and the optical properties of Ar discharge plasma jet with and without reaction gas injection were studied by a multichannel high-resolution spectroscopy and a wide spectral range spectroscopy. It is found that the deposited films are mainly composed of Si, B, N and O. The film surface presents a dense structure with hundred-nanometer-sized clusters, and the hardness of sample is greatly enhanced. When the reaction gas is injected into the plasma jet, the emission of excited atoms in the background plasma is greatly reduced, and the growth rate of Si–B–N film shows a significant downward trend as the reaction gas injection ring or substrate holder is moved away from the torch nozzle. A slight enhancement of background plasma emission is observed near the substrate surface with increasing the distance between gas injection ring and torch nozzle, which indicates that the suppression effect of the reactive gas injection on the background plasma emission and the activation efficiency of the reaction gas are weakened, thereby reducing the deposition rate.

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