Abstract
A full optical absorption spectrum for indium-doped silicon taken at different temperatures is presented which comprises the bound-to-free as well as the bound-to-bound transitions. The maximum absorption cross section for bound-to-free transitions is found to be sigma max=4.5*10-17 cm2. The ionisation energy was determined by absorption and photoconductivity measurements. Both methods yield EIn=157+or-1 meV. The bound-to-bound transitions were also observed by photoconductivity measurements at intermediate temperatures. The relative oscillator strength for the absorption lines shows a linear dependence on the In concentration. Experimental data are compared with different models for bound-to-free and bound-to-bound transitions at impurities in Si.
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