Abstract
The transmittance spectra of melt epitaxiy (ME)-grown InAsSb single crystals with cutoff wavelengths of 8–12 µm were measured and calculated under the assumption of a microscopic composition distribution function. A good agreement between the experimental and theoretical transmittance spectra was obtained. The results indicate that a microscopic composition distribution inhomogeneity exists in long-wavelength InAsSb epilayers with different compositions, which may be related to the energy band gap narrowing of this InAsSb.
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