Abstract
In2Se3 films are produced by ion-beam evaporation at substrate temperatures of 313 and 623 K. As the target, In2Se3 single crystals grown by the vertical Bridgman method are used. The composition and structure of the crystals and films are determined by the X-ray spectral analysis and X-ray diffraction techniques, respectively. It is established that the crystals and films crystallize with the formation of a hexagonal structure. The band gap and refractive index of the In2Se3 films are determined from the transmittance and reflectance spectra. It is found that, as the substrate temperature is increased, the band gap increases.
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