Abstract
In the work, GaAs photovoltaic convertor structures with embedded In0.8Ga0.2As arrays of quantum dots (QDs) have been obtained by metalorganic vapor-phase epitaxy. Spectral characteristic of internal quantum yield showed two spectral peaks at 930 and 985 nm of photosensitivity beyond the GaAs absorption edge. A theoretical calculation of the band transitions in the nanoheterostructure showed that the peak at 930 nm corresponds to the electron–heavy-hole band transition in the wetting layer of QDs, while the long-wavelength peak at 985 nm corresponds to InGaAs QDs. Contributions of both QDs and wetting layer to the total photocurrent of the devices with the different number of QDs have been calculated.
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