Abstract

Octahedra of In 2O 3 have been prepared on the side walls of hexagonal ZnO nanowires using a two-stage vapour–liquid–solid process. Raman studies of In 2O 3 and ZnO heterostructures show distinct phonon peaks corresponding to cubic In 2O 3 and hexagonal ZnO. From the room temperature photoluminescence it is found that the strong UV emission of ZnO nanowires has quenched significantly after In 2O 3 octahedra are grown over them. On the other hand, the emission related to In 2O 3 in the visible and violet regions is also observed. Growing such heterostructures radially is now one step closer to growing them axially in a single nanowire.

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