Abstract
The methods of photoluminescence and photoconductivity spectroscopy and the spectroscopy of photocurrent of a p–i–n structure are used to study samples with hybrid quantum-confined medium “quantum well–dots” (QWD) structures grown on GaAs substrates. The significant contribution of QWD states, which extends the GaAs absorption range to 1075 nm, is found in the photoconductivity and photocurrent spectra. The absorption and luminescence of the quantum-confined structures possess characteristic features of quantum wells. Analysis of the photocurrent and photoconductivity spectra demonstrate that the excitation of carriers from localized QWD states has a combined nature: at temperatures lower than 100 K and an electric-field strength of below 40 kV/cm, excitation is possible via tunneling to the matrix, while at higher temperatures thermal activation coming into play. Also, lateral photoconductivity is observed in the layers of quantum-confined structures.
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