Optical properties of HfO2 nanostructures for optoelectronic device

Abstract

The high purity and good transparent conductive nano and micro hafnium oxide (HfO2) films were deposited successfully using the pulsed laser deposition (PLD) method. The optical result shows a high transparency reached to (93) %. The value of the optical band gab of the deposited films at the optimum preparation condition is about 5.3eV, the surface morphology give a uniforms structure with the average roughness of (0.3 nm).