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Abstract
The optical properties of n- and p-type, modulation- and delta-doped Al0.35Ga0.65As–GaAs single heterojunctions (SHs) have been studied by means of low-temperature photoluminescence measurement and self-consistent calculation. A very strong, broad, and asymmetric H-band emission was observed only in p-type delta-doped SH. When the optical excitation intensity increases by two orders of magnitude a redshift as large as 27 meV is observed in the H-band emission energy. The large redshift observed is attributed to both inefficiency of screening in the two-dimensional-hole gas and effective band-gap renormalization. It was also observed that the H-band emission strongly depends upon the doping type (n or p type) and doping profile (modulation doping or delta doping).
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