Abstract
Self-assembled Ge/Si quantum dot (QD) superlattices (SLs) were grown by a solid-source molecular beam epitaxy (MBE) system with the Stranski-Kranstanov (SK) growth mode. Atomic force microscope (AFM) and transmission electron microscope (TEM) characterizations of the samples were presented. Photoluminescence (PL) and Raman scattering measurements were carried out. The temperature dependence of the PL intensity has been reported and fitted by the Arrhenius and Berthelot type function. Some valuable parameters were obtained through the fitted curves, one of which was closely related to the dimension and effective mass of electron of the QDs.
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