Abstract
AbstractThe reflection spectra of GeSi alloys are measured in the photon energy range 1 to 13 eV at room temperature and in the photon energy range 1 to 6 eV at liquid nitrogen temperature. For these energy ranges also the dielectric constant ϵ1 + iϵ2 is calculated. The curves giving the dependence of the ϵ2‐spectra on the composition of the alloy show changes in the energy band structure in some critical points.
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