Abstract
AbstractThe cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, respectively. The figures are provided by the authors T. I. Kamins (Hewlett‐Packard Laboratories) and L. Tsybeskov (New Jersey Institute of Technology).
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