Abstract
The effect of structural properties and the morphology of Ge@PAA nanocomposites synthesized by thermal deposition of Ge on porous anodic alumina matrices with different porosity on the band gap value and PL properties is investigated. PL in the range of 330–520 nm may be due to F and F2 luminescent centers in the surface of nanopores of PAA matrices. The density of electronic states in this interface depends on the temperature of matrices during deposition and on the surface morphology. The role of radiative recombination centers is played by the broken bonds in a thin intermediate Gex–Aly–Oz layer in the Ge/oxide matrix interface. No obvious effect of the crystalline structure of germanium nanoparticles on the PL maximum position is observed, but the spatial localization of electron–hole pairs of small-sized Ge crystallites of which nanoparticles consist leads to an increase in the optical band gap.
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