Abstract
We present an overview of our optical characterization work on dilute nitride quantumwell (QW) samples. A simple model for calculating interband transition energies isconstructed, tested against published results and used to model experimental data. Steady state photoluminescence (PL),time-resolved PL and photomodulated reflectance measurements are utilized to characterizeGaNAs/GaAs, GaInNAs/GaAs and InGaAs/GaAs QWs. The effects of carrierlocalization, hot-carrier relaxation, non-radiative recombination and the reducedbandgap temperature dependence of dilute nitrides are investigated. Emissionfrom recombining hot carriers in a GaInNAs/GaAs QW is recorded and used toestimate the LO-phonon scattering energy. The addition of small fractions of N isfound to have little effect on phonon energy, which is found to be meV.
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